Teospecvd system for high growth rate deposition of sio2. Pecvd teosoxide deposition process with very low mechanical stress. Silicon dioxide films deposited from tetraethylorthosilicate teos using plasma. The pecvdteos deposition process is a radio frequency rf plasma.
However, teos, one of the organosilicon materials, is safe to use, easy to handle as it is in liquid form and chemically stable. Plasmaenhanced chemical vapor deposition pecvd is a chemical vapor deposition process used to deposit thin films from a gas state to a solid state on a substrate. The energy transfer causes reactant gases to lose 1 electron or more and become ionized. Rapid thermal annealing rta process promotes the relaxation of the stress on the silicon.
Teos results process parameters deposition rate uniformity stress. The change in deposition rate of o3teos sacvd films deposited directly on various substrate materials and on various plasma treated sub strates are summarized in fig. In the case of teos, initial deposition is performed in a low pressure cvd lpcvd system employing the teos in vapor form with oxygen. Characteristic of sio films deposited by using low. Gb2256967a method of depositing a pecvd teos oxide film. Deposition kinetics of silicon dioxide from tetraethylorthosilicate by pecvd article in thin solid films 3601. The deposition of silicon dioxide layers on silicon substrate using tetraethylorthosilicate teos by plasma enhanced chemical vapor deposition pecvd method was characterized in this work. It has two advantages compared with the conventional cvd method. In this method of cvd, plasma is added in the deposition chamber with reactive gases to create the desired solid surface on the substrate. During deposition process, teos is bubbled out as vapor by the carrier gas ar from the heated teos pot through the heated delivery line to the process chamber.
Pecvd process control standards for the trion orion pecvd. In this paper, we will present and discuss two different practical techniques for stress control of pecvd sio2 and sinx. A method for avoiding separation between a teos layer and the underlying dielectric layer is described, a first dielectric layer is deposited over semiconductor device structures in and on a semiconductor substrate and planarized. Characteristic of sio2 films deposited by using lowtemperature. Cathode pecvd for highrate sio2 and sinx deposition. Plasmaenhanced chemical vapor deposition wikipedia.
Trench filling characteristics of low stress teosozone oxide. Your deposition time shut down procedure 19 once the temperature is at or less than 100. Exploration of plasmaenhanced chemical vapor deposition. Deposition pecvd of silicon oxide thin films by using teos as. Plasma enhanced chemical vapor deposition pecvd process overview. The advantages of dualfrequency plasmaenhanced chemical vapor deposition pecvd for the deposition of silicon nitride, oxynitrides, and teos oxide films are discussed, and a mechanism explaining the effects on step coverage, film stress, chemical composition, and film density and stability is proposed. This ionization along with the potential across the plasma allows the ions to travel toward the cathode. The effect of the presence of oxygen on the film deposition rate and mechanism and the physical properties of the films, particularly the step coverage properties conformality, are discussed in detail. Plasma enhanced chemical vapor deposition pecvd of. This paper describes a teos pecvd silicon oxide deposition process combined with rta treatment with which it is possible to obtain a silicon oxide layer up to 4. Development of plasma enhanced chemical vapor deposition. Deposition rate, thickness nonuniformity, optical constant such as refractive index and inplane stress of sin x. We found that the sio2 deposited using by pecvd with teosn2o2 exhibited properties typical of sio2 deposited by using thermal cvd and evaporation.
This discussion provides a practical understanding of the processes. The plasma reactor is a conventional parallelplate type with an rf discharge of. Cvd process that uses plasma uses cold plasma keeps wafers at low temperatures enhances properties of layers being. Stress control of plasma enhanced chemical vapor deposited silicon. Xp8 is the latest in asms xp family of standard platforms for 300mm wafers, and. The pecvd deposition processes with an extra plasma power ramp down pprd step and without pprd step are investigated. Study of the influence of temperature on the deposition of sio2. Advantages of dual frequency pecvd for deposition of ild. Particle formation and trapping behavior in a teoso2. The experimental set up of the pecvd reactor used for the preparation of. Chemical vapor deposition equipment such as chemical vapor deposition, vertical lpcvd furnaces, cluster pecvd tools, epitaxial cluster tools, single chamber pecvd tools from used, surplus, refurbished semiconductor manufacturing equipment, parts, accessories and supplies for sale, auctioned and wanted.
It is shown that the use of dual frequency for pecvd of dielectrics provides. Plasmaenhanced chemical vapor deposition pecvd is a radiofrequency rf induced glow discharge that transfers energy to reactant gases. The body of this paper will go into details of the process control standards developed in the nanofab for oxide and nitride deposition on. Plasma enhanced chemical vapor deposition pecvd is one of the most fundamental processes in microelectronics fabrication. Pecvd, teos, silicon oxide, residual stress, thin film deposition. The refractive index can be controlled by the osi ratio during the deposition process, which is. This study analyses the influence of the argon flow on the plasma enhanced chemical vapor. Stress relaxation study of the standard pecvd teos process. Analysis of sio2 thin films deposited by pecvd using an oxygen.
This pprd step is added in the end of pecvd process in order to prevent the deposition on the. Plasma enhanced chemical vapor deposition of sio2 using. In a method of depositing pecvd teos oxide film 12 for a semiconductor device positive charge in the film is reduced by controlling the stress of the teos oxide film asdeposited. Due to the high mechanical stress causing film cracking characteristic of the teos pecvd silicon oxide, deposited in our lab, it was not. Teos tetraethylorthosilicate pecvd plasma enhanced chemical vapor deposition silicon oxide, deposited in a home made cluster tool system, showed a high compressive stress 2, which cause the crack of the deposited layer for thickness 1. The deposition temperature can be reduced significantly by utilizing plasma to lower the reaction activation energy. The former satisfies the low thermal budget requirement for most production. Pecvd pecvd is a fabrication method for depositing thin films on a wafer. This report documents the study of deposition characteristics and film properties of silicon nitride sin x thin films deposited by plasma enhanced chemical vapor deposition pecvd using oxford plasmalab 100 system. Pecvd process control standards for the trion orion pecvd shane mccolman, research professional, university of alberta, nanofab introduction. While most of the pecvd equipment manufacturers provide anodedriven pecvd processes, samco also offers a unique cathode pecvd system which provides highrate deposition with good step coverage. Uniformity vapour deposition of erbiumdoped hydrogenated and deuterated amorphous carbon.
A brief discussion of glow discharge plasmas as used in pecvd is presented first. The advantage of this technique is to deposit silicon oxide with a high rate and at low temperature, that is compatible with a large range of applications. In addition, teos is chemically stable and easy to. Pecvd is a process, by which thin films of various materials can be deposited on substrates at lower temperature than that of standard lpcvd. Plasma enhanced chemical vapor deposition products plasma enhanced chemical vapor deposition pecvd enables deposition at lower temperatures by using a plasma which is formed from the gaseous chemicals in a reaction chamber. A detailed description of the reactor has been given elsewhere setyawan et al. Fundamentals of chemical vapor deposition cvd this 1 day course is designed to provide a sound foundation in the fundamentals of chemical vapor deposition used today in integrated circuit fabrication topics include chemical reactions and bonding, fundamentals of chemical vapor deposition, cvd dielectric films applications, cvd conducting films applications, basic cvd system architecture. Plasma enhanced chemical vapor deposition pecvd pecvd is an important deposition method for the fabrication of vlsi and tfts. Higher deposition rates are obtained for lower pecvd process temperatures, attributed to the possible incorporation of nondissociated teos subproducts. Another approach to achieving deposition from teos at lower temperatures is. Method to obtain teos pecvd silicon oxide thick layers for. Three types of chemical vapor deposition cvd systems.
Individual conditions that affect the oxide stress and deposition rate such as teos. Trench filling characteristics of low stress teosozone oxide deposited by pecvd. Surface related phenomena in integrated pecvdozoneteos. Effect of substrate on the step coverage of plasma. A conducting layer is deposited overlying the first dielectric layer and patterned thereby exposing portions of the first dielectric layer, the exposed portions of.
Sioc2h54 31, 32, a widely used as a common source materials to deposit. Plasma charging damage induced by a power ramp down. Small particles less than 5um which appear in concentrated clusters. We used the flotrancfc code of the ansys simulator to predict the velocity and temperature curves in the reactor. Therefore, teos is widely being used for the deposition of sio 2 film in pecvd systems of different reactor design configurations. These clusters appear in a pattern which mirrors that of the showerhead holes. The positive charge in the pecvd teos oxide film 12 can be reduced by forming a film having a tensile stress asdeposited followed by an annealing step at 900 deg c in oxygen and hydrogen chloride. Chemical reactions are involved in the process, which occur after creation of a plasma of the reacting gases. Teos was diluted in heliumoxygen mixtures and deposited as a function of discharge frequency 150 khz and 14 mhz and 0 2 flow in a parallel plate reactor. Pecvd at low temperature show superior step coverage.
Deposition of thick teos pecvd silicon oxide layers for. Up to 150 w of rf power, the deposition rate has a slight decrease. Films were deposited by tetraethoxysilane teos dualfrequency plasma enhanced chemical vapor deposition with different time interval fractions of highfrequency and lowfrequency plasma depositions. Exploration of plasmaenhanced chemical vapor deposition as a method for thinfilm fabrication with biological applications milana c. The results showed high influence of the reactor geometry and the deposition process pressure in the velocity distribution curves. Modeling and control antonios armaou, panagiotis d. Precursor gas and carrier gas mixed in reaction chamber ionization to plasma by rf electric field energetic electrons process steps a. Stress control of plasma enhanced chemical vapor deposited. The effect of variation in the rf power on the properties of the deposited sio 2 films, at constant chamber pressure of 3 pa have been studied. Pecvd and subatmospheric chemical vapor deposition. Plasma enhanced chemical vapor deposition pecvd by using tetraethylorthosilicate teos, as silicon source, is a wellknown technique to deposit silicon oxide thin films 1, 2.
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